Due to resistivity and reliability issues, conventional Cu interconnect faces problems. Intermetallic compounds have been studied as alternative materials for interconnect. Resistivity drops occurs at stoichiometric concentration of intermetallic compound. Metal aluminides such as CoAl, NiAl, CuAl2 are studied.
Thin film process
- DC/RF magnetron sputtering
- Co-sputtering from pure metal targets
Interconnect scaling
Size effects of conventional Cu interconnect
IEEE Int. Electron Devices Meeting, pp. 3.7.1–3.7.3 (2014)
Steinhogl et al., Phys Rev B66 (2002)
New interconnect material
- Intermetallic compounds
- Metal aluminides
▲ IEDM 2020, p.697-700